Always make sure you have read the corresponding MSDS beforehand and wear safety goggles and chemically resistant gloves when working with liquid chemicals such as resists, and make sure to share a TRA (Task Risk Analysis) or a complete operating procedure with the technicians. After they approve the operating procedure, which should include the transportation of the chemical to the lab and how to throw it away, you should be able to confidently use this chemical.
Note that some resists, developers, etc. are commercially designed chemicals, which means that its constituents, recipes, or formulas usually are confidential. This means that you should be extra careful with these types of chemicals. It is good to check what type of waste it belongs to and what the hazards are in the MSDS added to the delivery. If it is not readily available, contact the manufacturer!
ΒΆ List of common resists
Some commonly used resists in the cleanroom are:
E-beam resists (positive):
- PMMA
- MMAxMAA (PMMA copolymer)
- PMGI
E-beam resists (negative):
- PMMA
- Ma-N 24xx
- HSQ
- AZ 5214
E-beam resists (special):
- Electra92
- Conductive polymer PEDOT:PSS
Optical:
-
MaN 1410
Make sure your Si/SiO2 chips are clean (acetone does not always help, I use 10min O2 plasma etch in Plasmalab90)
Spin MaN1410 resist at 3000rpm (recipe 3 custom, 30-45sec gives ~1um). If resist does not stick, clean chips as described above
Bake, 90 C, at least 90 sec
Expose, 15 sec
Develop, MaD 533s for 15 sec (maybe even a bit less)
Rinse, DI water, 30 sec
Dry, N2 (blow-dry the water)
If needed, postbake (90 C, x min) -
AZ 5214E
Spin AZ5214E resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
Bake, 90 C, 2.5 min
Expose, 15 sec
Develop, AZ312 MIF (metal ion free) developer : DI water 1:1, 40 sec (or just look at the process, don't time it)
Rinse, DI water, 30 sec
Dry, N2 (blow of the water very carefully for materials that give bad adhesion)
If needed, postbake (90 C, 3 min) -
MaP 1205
Spin MaP 1205 resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
Bake, 100 C, 30 sec
Expose, 15 sec
Develop, MaD 532 : DI water 9:1, 30 sec (just look at the process, don't time it)
Rinse, DI water, 30 sec
Dry, N2 (blow of the water very carefully for materials that give bad adhesion)
If needed, postbake (90 C, 3 min)
After etching: remove remaining resist with acetone -
HPR 205
Spin HPR 205 resist, recipe 1 or 2 of the spinner (6000 or 4000 rpm)
Bake, 90 C, 2.5 min
Expose, 15 sec
Develop, AZ312 MIF (metal ion free) developer : DI water 1:1, 40 sec (or just look at the process, don't time it)
Rinse, DI water, 30 sec
Dry, N2 (blow of the water very carefully for materials that give bad adhesion)
If needed, postbake (90 C, 3 min) -
SU-8